- - 2 GB DDR2 667 MHz
- - 1.8 V
- - ECC
2GB RAM DDR2 PC667 ECC
- JEDEC standard 1.8V ± 0.1V
- 8 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5
- Programmable Additive Latency: 0, 1 , 2 , 3 and 4
- Write Latency(WL) = Read Latency(RL) -1
- Burst Length: 4 , 8(Interleave/nibble sequential)
- Programmable Sequential / Interleave Burst Mode
- Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
- Off-Chip Driver(OCD) Impedance Adjustment
- On Die Termination with selectable values(50/75/150 ohms or disable)
- support High Temperature Self-Refresh rate enable feature
- Package: 68ball FBGA - 128Mx8 , 84ball FBGA - 64Mx16
- All of Lead-free products are compliant for RoHS
Samsung 2GB RAM DDR2 PC667 ECC, 2 GB, DDR2, 667 MHz
Samsung 2GB RAM DDR2 PC667 ECC. Internal memory: 2 GB, Internal memory type: DDR2, Memory clock speed: 667 MHz, ECC